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摘要在科技日益进步的今天，各中电子器件发展的总体趋势是微型化，光探测器的发展也顺应微型化这个趋势。微电子器件微型化这个方向的发展前景十分广阔。石墨烯只有一层原子的晶体，具有优异的物理性能；氮化硼烯是只有一层原子的优异电介质，具有原子级的平坦表面，与石墨烯的错配度很小。本实验将只有一个原子层的石墨烯与氮化硼烯结合成纳米光探测器，厚度可以达到只有十几纳米，这可以使得光探测器的体积达到纳米水平。本文叙述利用湿法转移转移石墨烯与氮化硼烯薄膜的方法，通过相互堆叠的方式成功制备出了 G/BN/G 光探测器，并利用光学显微镜、AFM、SEM等一系列手段观察了石墨烯、氮化硼及探测器的形貌以及测试电学性能与光学性能。本实验利用 AFM 测得氮化硼的厚度为 1nm 左右,本实验使用紫外-可见光吸收光谱得到氮化硼对 203 纳米的紫外光吸收率最高，从而得到六方氮化硼的带隙宽度为 5.97eV，并利用氮化硼可以打开石墨烯的带隙。本实验测试了氮化硼基探测器的电学性能，得到了光探测器的 I-V曲线，结果表明变化趋势符合 Fowler-Nordheim 隧穿理论，在电压较低时，电流密度与电压的关系是线性的，电压较高时，电流密度的平方与电压密度呈线性关系。42029
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毕业论文关键词 石墨烯 氮化硼 异质结 光电探测器 量子隧道效应
Title photodetectors that based on boron nitride heterojunctionAbstractIn today's technological advances, the general trend of the development of variouselectronic devices are miniaturized,the development of optical detectors alsoconform to this trend of miniaturization.Prospects of microelectronic devicesminiaturization in this direction is very broad.Only atomic layer graphenecrystals have excellent physical properties;BN-ene is excellent dielectric onlylayer of atoms, atomic-level flat surface.Tthe mismatch of graphene and BN-eneis small.In this study, only one graphene atomic layer combined with the boronnitride-ene into nano light detector, the thickness may reach only tens ofnanometers, which can make the volume of the photodetector to the nanometer level.This paper describes a method using a wet transfer Transfer graphene and BN-enefilm stacked on each other by way of successfully prepared G / BN / G lightdetectors,And using an optical microscope, AFM, SEM and a series of testinstruments to observe the morphology and electrical properties and opticalproperties of graphene, boron nitride and the detector.This experiment use theAFM measured boron nitride thickness of about 1nm .We use UV - visible absorptionspectrum of the resulting boron nitride ultraviolet light absorption maximum 203nm, whereby hexagonal boron nitride band gap width of 5.97eV, and use BN can opengraphene a band gap.This experiment tested the electrical properties of boronnitride based detectors obtained I-V curve , in line with its trend ofFowler-Nordheim tunneling theory, at low voltage, current density and voltagerelationship is linear, voltage at higher current density and the square of thedensity of the voltage is linear.
Keywords Graphene BN Heterojunction Photodetector Quantum tunnel effect
目录
1研究背景2
1.1氮化硼的结构、性质及制备方法2
1.1.1氮化硼的结构.2
1.1.2氮化硼的性质.3
1.1.3氮化硼的制备方法.3
1.2石墨烯的结构、性质..6
1.3研究的意义.7
1.4研究方法..8
2实验过程9
2.1氮化硼的制备过程9
2.2石墨烯与氮化硼的转移..11
2.3氮化硼基光探测器的制备15
3材料及器件的表征..17
3.1石墨烯的表征17
3.1.1长有石墨烯宏观铜箔形貌..17
3.1.2显微镜下石墨烯的形貌特征.17
3.2氮化硼的表征18
3.2.1生长有氮化硼薄膜的铜箔宏观形貌18